Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements-Reference-Cited by-同舟云学术

Charge Collection Efficiency of Single GaN Core–Shell Wires Assessed by High-Precision Ion-Beam-Induced Charge Measurements

Published:2024-02-21 Issue:3 Volume:6 Page:1682-1692
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Verheij Dirkjan¹²^ORCID,Vićentijević Milan³,Jakšić Milko³,Peres Marco¹²⁴,Alves Luís Cerqueira⁴⁵^ORCID,Cardoso Susana¹^ORCID,Alves Eduardo²⁴,Durand Christophe⁶^ORCID,Eymery Joël⁷^ORCID,Möller Wolfhard⁸,Lorenz Katharina¹²⁴^ORCID

Affiliation:

1. Instituto de Engenharia de Sistemas e Computadores - Microssistemas e Nanotecnologia, Rua Alves Redol 9, 1000-029 Lisboa, Portugal

2. IPFN, Campus Tecnológico e Nuclear, Instituto Superior Técnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal

3. Laboratory for Ion Beam Interactions, Ruder Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, Croatia

4. DECN, Campus Tecnológico e Nuclear, Instituto Superior Técnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal

5. C2TN, Campus Tecnológico e Nuclear, Instituto Superior Técnico, Estrada Nacional 10, km 139,7, 2695-066 Bobadela LRS, Portugal

6. CEA, IRIG, PHELIGS, NPSC, Université Grenoble Alpes, 17 Avenue des Martyrs, 38000 Grenoble, France

7. CEA, IRIG, MEM, NRS, Université Grenoble Alpes, 17 Avenue des Martyrs, 38000 Grenoble, France

8. Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

Funder

Funda??o para a Ci?ncia e a Tecnologia

H2020 Excellent Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01584

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4. Lorenz, K.; Peres, M.; Franco, N.; Marques, J. G.; Miranda, S. M. C.; Magalhães, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E. In Radiation Damage Formation and Annealing in GaN and ZnO, Oxide-based Materials and Devices II, Vol. 7940, SPIE, 2011.

5. Complete composition tunability of InGaN nanowires using a combinatorial approach

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