High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States-Reference-Cited by-同舟云学术

High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States

Published:2023-08-17 Issue:9 Volume:5 Page:4792-4804
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hudait Mantu K.¹^ORCID,Clavel Michael B.¹^ORCID,Karthikeyan Sengunthar¹^ORCID,Bodnar Robert J.²

Affiliation:

1. Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States

2. Fluids Research Laboratory, Department of Geosciences, Virginia Tech, Blacksburg, Virginia 24061, United States

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00568

Reference70 articles.

1. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In_xAl_1–xAs Stressors

2. Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

3. High Hole-Mobility Strained-$\hbox{Ge/Si}_{0.6} \hbox{Ge}_{0.4}$ P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness

4. Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors

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