Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO<sub>4</sub> Semiconductors: An Ab Initio Study-Reference-Cited by-同舟云学术

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO₄ Semiconductors: An Ab Initio Study

Author:

Cha Sun-Kyung¹²³,Im Seongil¹²^ORCID,Kim Yong-Sung³^ORCID,Baeck Juheyuck⁴,Noh Jiyong⁴,Park Kwon-Shik⁴,Kim Jeom Jae⁴,Yoon Soo-Young⁴

Affiliation:

1. Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Korea

2. Physics Department, Yonsei University, Seoul 03722, Korea

3. Korea Research Institute of Standards and Science, Daejeon 34113, Korea

4. LG Display R&D Center, 245 LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference34 articles.

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