Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films
Author:
Affiliation:
1. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00057
Reference70 articles.
1. Doping semiconductor nanocrystals
2. Impurity Doping in Silicon Nanowires
3. Doping of Organic Semiconductors: Impact of Dopant Strength and Electronic Coupling
4. Bulk Silicon Crystals with the High Boron Content, Si1–xBx: Two Semiconductors Form an Unusual Metal
5. Moore's Law Forever?
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced Activation in Phosphorous-Doped Silicon via Dual-Beam Laser Annealing;Materials;2024-08-30
2. Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing;Materials Science in Semiconductor Processing;2024-06
3. Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing;Applied Surface Science;2024-06
4. Assessment of thermo-mechanical phenomena in Si-based diodes via operando confocal Raman microscopy;Measurement;2024-04
5. Complementary use of atom probe tomography (APT) and differential hall effect metrology (DHEM) for activation loss in phosphorus-implanted polycrystalline silicon;Scripta Materialia;2024-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3