Device Characterization of Nanoscale Vertical-Channel Transistors Implemented with a Mesa-Shaped SiO2 Spacer and an In–Ga–Zn–O Active Channel-Reference-Cited by-同舟云学术

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Device Characterization of Nanoscale Vertical-Channel Transistors Implemented with a Mesa-Shaped SiO2 Spacer and an In–Ga–Zn–O Active Channel

Published:2021-08-31 Issue:9 Volume:3 Page:4189-4196
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ryoo Hyun-Joo¹,Ahn Hyun-Min¹,Seong Nak-Jin²,Choi Kyu-Jeong²,Hwang Chi-Sun³,Chang Sung-Jin⁴,Yoon Sung-Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea

2. NCD Co. Ltd., Daejeon 34015, Korea

3. ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea

4. Center for Analysis & Evaluation, National Nano Fab Center, Daejeon, 34141, Korea

Funder

Ministry of Education

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00631

Reference40 articles.

1. Performance of stacked nanosheet gate all around FET’s with EUV patterned gate and sheets

2. Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

3. A Simulation Study of Gate-All-Around Nanowire Transistor With a Core-Substrate

4. Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

5. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

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1. Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition;Materials Science in Semiconductor Processing;2024-10

2. Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm;Materials Science in Semiconductor Processing;2024-03

3. Improvement in Short-Channel Effects and Bias-Stress Stability of Vertical Thin-Film Transistors Using Atomic-Layer-Deposited In–Ga–Sn–O Channels;ACS Applied Electronic Materials;2023-11-21

4. Vertically Extended Channel Architecture for Implementing a Photolithographically Scalable Thin-Film Transistor;IEEE Electron Device Letters;2023-08

5. Research Progress of Vertical Channel Thin Film Transistor Device;Sensors;2023-07-23

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