Study on Optoelectronic Characteristics of ZnGa2O4 Thin-Film Phototransistors-Reference-Cited by-同舟云学术

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Study on Optoelectronic Characteristics of ZnGa2O4 Thin-Film Phototransistors

Published:2019-05-03 Issue:5 Volume:1 Page:783-788
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Shen Yuan-Chu¹,Tung Chun-Yi¹,Huang Chiung-Yi¹,Lin Yu-Chang²,Lin Yan-Gu²,Horng Ray-Hua¹³^ORCID

Affiliation:

1. Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC

2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan, ROC

3. Center for Emergent Functional Matter Science, National Chiao Tung University, Hsinchu 300, Taiwan, ROC

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00128

Reference27 articles.

1. Recent advances in ultraviolet photodetectors

2. Flame Detection by a β-Ga2O3-Based Sensor

3. GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

4. GaAs BIB photodetector development for far-infrared astronomy

5. Nanowire Ultraviolet Photodetectors and Optical Switches

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1. Enhancement-mode ZnGa2O4-based Phototransistor with high UV–visible rejection ratio grown by metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-11

2. Study of geometry effect on the performance of thin-film transistors fabricated with ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition for high voltage applications;Materials Science in Semiconductor Processing;2024-11

3. Performance Enhancement of ZnGa₂O₄ Metal Oxide-Semiconductor Field-Effect Transistors Grown via Metal Organic Chemical Vapor Deposition on Sapphire Substrates;ACS Applied Electronic Materials;2024-07-16

4. Preparation of ZnGa2O4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering;Vacuum;2024-06

5. Deep-ultraviolet n-ZnGa₂O₄/p-GaN heterojunction photodetector fabricated by pulsed laser deposition;Optics Letters;2024-04-19

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