Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact
Author:
Affiliation:
1. College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, China
2. The Key Laboratory of Micro-nano Energy Materials and Application Technologies, University of Hunan Province, Changsha 410012, China
Funder
Natural Science Foundation of Hunan Province
Scientific Research Foundation of Hunan Provincial Education Department
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00185
Reference57 articles.
1. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
2. Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
3. Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
4. Progress and prospects of two-dimensional materials for membrane-based osmotic power generation
5. Electrical contacts to two-dimensional semiconductors
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