Topologically Frustrated Graphene Antidot Lattice Semiconductors with Room-Temperature Magnetism-Reference-Cited by-同舟云学术

Topologically Frustrated Graphene Antidot Lattice Semiconductors with Room-Temperature Magnetism

Published:2023-02-02 Issue:6 Volume:127 Page:3276-3284
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Pan Yu¹,Lv Haifeng¹^ORCID,Wu Xiaojun¹^ORCID

Affiliation:

1. Hefei National Research Center for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Lab of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Central Committee of the Communist Party of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c08075

Reference60 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene Spintronic Devices with Molecular Nanomagnets

3. Graphene spintronics

4. Graphene spintronics: the European Flagship perspective

5. Colloquium : Spintronics in graphene and other two-dimensional materials

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