Zinc Dopant-Induced Modulation of Electronic Structure and Defect Emissions in Monoclinic Gallium Oxide
Author:
Affiliation:
1. Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh
2. School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c07684
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1. Recent progress on the effects of impurities and defects on the properties of Ga2O3
2. Impurity level properties in transition metal doped α-Ga2O3 for optoelectronic applications
3. A review of Ga2O3materials, processing, and devices
4. Electronic structure and optical property of metal-doped Ga2O3: a first principles study
5. Approach to achieving a p -type transparent conducting oxide: Doping of bismuth-alloyed Ga2O3 with a strongly correlated band edge state
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