Band Alignment at Au/MoS2 Contacts: Thickness Dependence of Exfoliated Flakes-Reference-Cited by-同舟云学术

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Band Alignment at Au/MoS2 Contacts: Thickness Dependence of Exfoliated Flakes

Published:2017-09-29 Issue:40 Volume:121 Page:22517-22522
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sohn Ahrum¹²,Moon Hankyoul¹,Kim Jayeong¹,Seo Miri¹,Min Kyung-Ah³,Lee Sang Wook¹^ORCID,Yoon Seokhyun¹,Hong Suklyun³,Kim Dong-Wook¹^ORCID

Affiliation:

1. Department of Physics, Ewha Womans University, Seoul 03760, Korea

2. School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Korea

3. Department of Physics and Graphene Research Institute, Sejong University, Seoul 05006, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.7b07511

Reference41 articles.

1. Two-dimensional atomic crystals

2. Few-Layer MoS2: A Promising Layered Semiconductor

3. The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

4. Reduction of Fermi level pinning at Au–MoS 2 interfaces by atomic passivation on Au surface

5. Ferromagnetic contact between Ni and MoX 2 (X = S, Se, or Te) with Fermi-level pinning

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