A ZrO2/TaOx Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances-Reference-Cited by-同舟云学术

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A ZrO2/TaOx Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

Published:2020-07-06 Issue:30 Volume:124 Page:16624-16628
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Hur Ji-Hyun¹²^ORCID,Lee Dongsoo³,Kim Deok-kee¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea

2. Hur Advanced Research, 96 Dongtanbanseok-ro, Hwaseong-si, Gyeonggi-do 18456, Republic of Korea

3. Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San 16 Banwol-Dong, Hwaseong-City, Gyeonggi-Do 447-701, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c03455

Reference18 articles.

1. Towards a universal memory?

2. Toward a Universal Memory

3. Current status of resistive nonvolatile memories

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An ultra high-endurance memristor using back-end-of-line amorphous SiC;Scientific Reports;2024-06-18

2. Artificial Neural Synapses Based on Microfluidic Memristors Prepared by Capillary Tubes and Ionic Liquid;The Journal of Physical Chemistry Letters;2024-02-27

3. Synaptic Plasticity of a Microfluidic Memristor with a Temporary Memory Function Based on an Ionic Liquid in a Capillary Tube;The Journal of Physical Chemistry C;2023-02-03

4. First-principles simulation of neutral and charged oxygen vacancies in m-ZrO₂: an origin of filamentary type resistive switching;Nanotechnology;2022-06-07

5. Coexistence of Bipolar Resistive Switching and the Negative Differential Resistance Effect from a Kesterite Memristor;The Journal of Physical Chemistry C;2020-12-30

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