Device Transport Characteristics of Monolayer SnS<sub>2</sub> and HfS<sub>2</sub> Field-Effect Transistors with Semimetal Contacts-Reference-Cited by-同舟云学术

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Device Transport Characteristics of Monolayer SnS₂ and HfS₂ Field-Effect Transistors with Semimetal Contacts

Published:2024-08-15 Issue:34 Volume:128 Page:14458-14468
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lang Shuai¹,Song Shun²,Lyu Juan¹^ORCID,Gong Jian¹³

Affiliation:

1. School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, Inner Mongolia, P. R. China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

3. College of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot 010022, Inner Mongolia, P. R. China

Funder

Natural Science Foundation of Inner Mongolia Autonomous Region

National Natural Science Foundation of China

Inner Mongolia Youth Science and Technology Talents Support Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c03583

Reference74 articles.

1. High-Speed Low-Power Junctionless Field-Effect Transistor with Ultra-Thin Poly-Si Channel for Sub-10-nm Technology Node

2. Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology*

3. Two-dimensional semiconductors for transistors

4. Moore's Law Forever?

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