Phonon Assisted Exciton Processes in Two-Dimensional Tungsten Monocarbide-Reference-Cited by-同舟云学术

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Phonon Assisted Exciton Processes in Two-Dimensional Tungsten Monocarbide

Published:2024-05-10 Issue:20 Volume:128 Page:8341-8350
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Saraswat Rishabh¹,Kolos Miroslav²^ORCID,Verma Rekha¹^ORCID,Karlický František²^ORCID,Bhattacharya Sitangshu³^ORCID

Affiliation:

1. Nanoscale Electro-thermal Laboratory, Indian Institute of Information Technology Allahabad, Allahabad, Uttar Pradesh 211015, India

2. Department of Physics, Faculty of Science, University of Ostrava, 30. Dubna 22, 701 03 Ostrava, Czech Republic

3. Electronic Structure Theory Group, Department of Electronics and Communication Engineering, Indian Institute of Information Technology Allahabad, Allahabad, Uttar Pradesh 211015, India

Funder

European Commission

Department of Science and Technology, Ministry of Science and Technology

Ministerstvo ?kolstv??, Ml??de?e a Telov??chovy

Grantov?? Agentura Cesk?? Republiky

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c02062

Reference60 articles.

1. Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

2. Excitonic resonances in thin films of WSe2: from monolayer to bulk material

3. Excitonic properties of semiconducting monolayer and bilayer MoTe2

4. Direct determination of monolayer MoS2and WSe2exciton binding energies on insulating and metallic substrates

5. InSe as a case between 3D and 2D layered crystals for excitons

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