Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy-Reference-Cited by-同舟云学术

Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy

Published:2015-11-16 Issue:47 Volume:119 Page:26776-26782
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Pouch Sylvain¹²,Amato Michele³,Bertocchi Matteo⁴,Ossicini Stefano⁴,Chevalier Nicolas¹²,Mélin Thierry⁵,Hartmann Jean-Michel¹²,Renault Olivier¹²,Delaye Vincent¹²,Mariolle Denis¹²,Borowik Łukasz¹²

Affiliation:

1. Université Grenoble Alpes, F-38000 Grenoble, France

2. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

3. Institut d’Electronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France

4. Dipartimento di Scienze e Metodi dell’Ingegneria, Università di Modena e Reggio Emilia, Pad. Morselli, Via Amendola 2, 42122 Reggio Emilia, Italy

5. Institut d’Electronique de Microélectronique et de Nanotechnologie, CNRS-UMR 8520, Avenue Poincaré, BP 60069,59652 Villeneuve d’Ascq Cedex, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b09278

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5. Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%)

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