Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots
Author:
Affiliation:
1. Department of Chemistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
2. Department of Materials Science and Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.1c20088
Reference36 articles.
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5. Indium Phosphide-Based Quantum Dots with Shell-Enhanced Absorption for Luminescent Down-Conversion
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