Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method-Reference-Cited by-同舟云学术

Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Published:2004-01-22 Issue:2 Volume:4 Page:317-321
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Li Yiming¹,Mann David¹,Rolandi Marco¹,Kim Woong¹,Ural Ant¹,Hung Steven¹,Javey Ali¹,Cao Jien¹,Wang Dunwei¹,Yenilmez Erhan¹,Wang Qian¹,Gibbons James F.¹,Nishi Yoshio¹,Dai Hongjie¹

Affiliation:

1. Department of Chemistry and Laboratory for Advanced Materials, Stanford University, and Department of Electrical Engineering, Stanford University, Stanford, California 94305

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl035097c

Reference24 articles.

1. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

2. Ballistic carbon nanotube field-effect transistors

3. Single-walled carbon nanotube electronics

4. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

5. A Route for Bulk Separation of Semiconducting from Metallic Single-Wall Carbon Nanotubes

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