Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor-Reference-Cited by-同舟云学术

Formation of a Stable p–n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

Published:2013-06-28 Issue:7 Volume:13 Page:3023-3028
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhang Y. J.¹,Ye J. T.¹,Yomogida Y.²,Takenobu T.²,Iwasa Y.¹³

Affiliation:

1. Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

2. Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan, and PRESTO, Japan Science and Technology Agency, Chiyodaku, Tokyo 102-0076, Japan

3. Center for Emergent Matter Science (CEMS), Riken, Hirosawa 2-1, Wako 351-0198, Japan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl400902v

Reference30 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Single-layer MoS2 transistors

4. Electric Double Layer Transistor of Organic Semiconductor Crystals in a Four-Probe Configuration

5. Ambipolar MoS2 Thin Flake Transistors

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