Solution-Processable Zirconium Oxide Gate Dielectrics for Flexible Organic Field Effect Transistors Operated at Low Voltages
Author:
Affiliation:
1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
2. Department of Bioelectronics, Ecole Nationale Superieure des Mines, CMP-EMSE, MOC Gardanne 13541, France
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm303547a
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1. The path to ubiquitous and low-cost organic electronic appliances on plastic
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