Morphology- and Orientation-Controlled Gallium Arsenide Nanowires on Silicon Substrates-Reference-Cited by-同舟云学术

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Morphology- and Orientation-Controlled Gallium Arsenide Nanowires on Silicon Substrates

Published:2006-12-09 Issue:1 Volume:7 Page:39-44
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ihn Soo-Ghang,Song Jong-In,Kim Tae-Wook,Leem Dong-Seok,Lee Takhee,Lee Sang-Geul,Koh Eui Kwan,Song Kyung

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0618795

Reference24 articles.

1. Size-, shape-, and position-controlled GaAs nano-whiskers

2. Growth of epitaxial InAs nanowires in a simple closed system

3. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers

4. Growth and transport properties of complementary germanium nanowire field-effect transistors

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