Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors-Reference-Cited by-同舟云学术

Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors

Published:2014-03-07 Issue:4 Volume:8 Page:3628-3635
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Miao Jinshui¹²,Hu Weida¹²,Guo Nan¹²,Lu Zhenyu¹²,Zou Xuming³,Liao Lei³,Shi Suixing¹²,Chen Pingping¹²,Fan Zhiyong⁴,Ho Johnny C.⁵,Li Tian-Xin¹²,Chen Xiao Shuang¹²,Lu Wei¹²

Affiliation:

1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China

2. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China

3. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China

4. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, China

5. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn500201g

Reference37 articles.

1. Parallel Array InAs Nanowire Transistors for Mechanically Bendable, Ultrahigh Frequency Electronics

2. Diameter-Dependent Electron Mobility of InAs Nanowires

3. Tunable Electronic Transport Properties of Metal-Cluster-Decorated III-V Nanowire Transistors

4. Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

5. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Cited by 248 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable surface band bending enables switchable photoconductance of colloidal InSb nanowires for self-powered and broadband photodetectors with fast response;Applied Surface Science;2024-10

2. High-Performance Photodetectors Based on Suspended Ultralong Carbon Nanotubes;ACS Nano;2024-08-26

3. Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors;Advanced Functional Materials;2024-08-26

4. Flexible photodetector for broadband detection using wurtzite phase CuFeS2 nanoparticles;Materials Science in Semiconductor Processing;2024-08

5. Integration of two-dimensional materials based photodetectors for on-chip applications;Physics Reports;2024-08