Doping of Si into GaN Nanowires and Optical Properties of Resulting Composites-Reference-Cited by-同舟云学术

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Doping of Si into GaN Nanowires and Optical Properties of Resulting Composites

Published:2005-04-01 Issue:4 Volume:5 Page:530-535
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Xu Congkang,Chung Sangyong,Kim Misuk,Kim Dong Eon,Chon Bonghwan,Hong Sangsu,Joo Taiha

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bottom‐Up Growth Methods;Wide Bandgap Nanowires;2022-06-23

2. The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector;Sensors;2019-12-02

3. Enhanced H2S gas sensing properties of Mn doped ZnO nanoparticles—an impedance spectroscopic investigation;Materials Research Express;2019-04-03

4. Synthesis and field emission performance for P-doped GaN NWs;Superlattices and Microstructures;2018-03

5. Fabrication Gallium Nitride (GaN) Nanowires by Thermal Chemical Vapor Deposition (TCVD) Technique;Advanced Materials Research;2014-04

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