Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing-Reference-Cited by-同舟云学术

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Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

Published:2011-10-01 Issue:10 Volume:11 Page:9251-9255
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Hadj Alouane M. H.,Ilahi B.,Maaref H.,Salem B.,Aimez V.,Morris D.,Gendry M.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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2. Oblique angle deposited InN quantum dots array for infrared detection;Journal of Alloys and Compounds;2018-10

3. Crystalline Engineering Toward Large-Scale High-Efficiency Printable Cu(In,Ga)Se2 Thin Film Solar Cells on Flexible Substrate by Femtosecond Laser Annealing Process;ACS Applied Materials & Interfaces;2017-04-11

4. Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution;Journal of Luminescence;2014-01

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