Abstract
In this paper, visible-blind ultraviolet (UV) detectors based on a ZnS/p-GaN heterojunction structure were fabricated. The heterojunction structure was composed of a ZnS nanostructure deposited on a p-GaN/sapphire substrate. The ZnS nanostructured component was obtained
via radio-frequency magnetron sputtering. The device based on this ZnS/p-GaN heterojunction structure showed a reproducible, stable, and fast response speed. Therefore, the results demonstrated that the ZnS/p-GaN heterojunction was successfully fabricated using this relatively
low-cost method.
Publisher
American Scientific Publishers
Subject
General Materials Science
Cited by
6 articles.
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