Optimal Floating Gate Potential for Extending Data Retention of Post-Baking Method in Sub-20 nm Triple Level per Cell NAND Flash Memory
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Published:2016-07-01
Issue:7
Volume:16
Page:7295-7300
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Hsu Yu-Cheng,Lin Wei,Chang Chun-Yen
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering