Vliyanie primesey na adsorbtsiyu kisloroda na poverkhnosti Ti5Si3(0001)

Author:

Bakulin A. V1,Chumakova L. S1,Kul'kova S. E12

Affiliation:

1. Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences

2. National Research Tomsk State University

Abstract

The influence of simple and transition metal impurities, as well as interstitial impurities (B, C, and N), on the oxygen adsorption on the Ti5Si3 titanium silicide surface has been studied using the of projector augmented wave method within the electron density functional theory. It has been shown that titanium-substituting impurities belonging to the latter halves of the 3d–5d periods cause most significant changes in the adsorption energy. In addition, simple metals and interstitial impurities reduce the oxygen–surface interaction. By analyzing local electron densities of states, charge density difference distribution, charge transfer, and the overlap population of oxygen bonds to nearest-neighbor atoms, we have revealed special aspects of impurity influence on chemical bonding between the titanium silicide surface and oxygen. Factors responsible for an increase/decrease in the adsorption energy of oxygen on the doped surface are discussed. A correlation between the change in adsorption energy and the electronegativity of impurities has been found.

Publisher

The Russian Academy of Sciences

Reference35 articles.

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2. S. P. Murarka, Silicides for VLSI Applications, Academic Press, New York (1983).

3. L. J. Chen, Silicide Technology for Integrated Circuits, IEE, London (2009).

4. J. Derrien, J. Chevrier, V. Le Thanh et al., Appl. Surf. Sci. 56, 382 (1992).

5. D. L. Anton, D. M. Shah, D. N. Duhl et al., JOM 41, 12 (1989).

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