Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates-Reference-Cited by-同舟云学术

Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates

Published:2023-05-01 Issue:3 Volume:52 Page:167-173
ISSN:0544-1269
Container-title:Микроэлектроника
language:
Short-container-title:Mikroèlektronika

Author:

Klimov E. A.¹²,Pushkarev S. S.¹,Klochkov A. N.³,Mozhaeva M. O.²

Affiliation:

1. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences

2. State Scientific Center of the Russian Federation Joint Stock Company NPO “Orion,”

3. National Research Nuclear University “MEPhI,”

Abstract

The production of superlattices with pseudomorphically strained quantum wells (QWs) {InxGa1–xAs/GaAs} grown by molecular beam epitaxy on GaAs substrates with (100), (110), and (111)A crys-tallographic surface orientations is reported. The quality of the crystal structure of epitaxial samples is assessed using the atomic force microscopy of their surface. The manifestation of a piezoelectric field in the photoluminescence spectra is reported.

Publisher

The Russian Academy of Sciences

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