Defect-impurity engineering in implanted silicon
Author:
Publisher
Uspekhi Fizicheskikh Nauk (UFN) Journal
Subject
General Physics and Astronomy
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. LOCALIZATION OF NITROGEN ATOMS IN Si–SiO2 STRUCTURES;HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENCES;2022-11-15
2. On the Dynamic Annealing of Ion-Induced Radiation Damage in Diamond under Irradiation at Elevated Temperatures;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-03
3. Ion Implantation as a Tool for Controlled Modification of Photoelectrical Properties of Silicon;Ion Beam Applications;2018-07-18
4. Effect of Radiation-Induced Defects Produced by Low-Energy Protons in a Heavily Doped Layer on the Characteristics of n+‒p‒p+ Si Structures;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-05
5. Impact of damages in monocrystalline n‐Si on material photosensitivity;physica status solidi c;2017-05-23
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