Fabrication of Highly Stable a-Si:H from Chlorinated Precursors

Abstract

ABSTRACTHigh quality a-Si:H was fabricated from SiH2Cl2 by ECR hydrogen plasma at high growth rate (>15 A/s). After sticking the precursors, SiHnClm (n+m≤3), stable Si-network was formed by chemical reactions enhanced on the heated substrate due to strong interaction between Cl and H bonded with Si. The defect densities of 3×1015 and 3×1016 cm3 were obtained for the films in the as-grown and the saturated states after light soaking, respectively. In these stable films, a surprisingly large amount of voids (2–10 vol%) was found by the simulation of the spectra of pseudo-dielectric constant measured by spectral ellipsometry.