Abstract
ABSTRACTLow-temperature-grown (LTG) GaAs is a unique material that has been used in a variety of device applications to achieve record performance. LTG GaAs used as a buffer layer eliminates sidegating and backgating and in GaAs integrated circuits. Record output power density (1.57 W/mm) and superior microwave-switch performance were demonstrated when LTG GaAs was used at a gate insulator in a metal-insulator-semiconductor field-effect transistor. High-speed (0.5 ps) and high-voltage (1 kV) LTG GaAs photoconductive switches have also been demonstrated. Using the same material, researchers have demonstrated highresponsivity (0.1 A/W), wide-bandwidth (∼ 375 GHz) LTG GaAs photodetectors. Devices incorporating LTG GaAs are currently being optimized for systems applications. LTG GaAs technology can enhance system performance and enable new systems for military and commercial applications in the areas of radar, communications, instrumentation, and highspeed computing.
Publisher
Springer Science and Business Media LLC
Cited by
28 articles.
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1. From stars to nuclei;The European Physical Journal Special Topics;2008-04
2. TEM and PL characterization of erbium and oxygen co-implanted LT-GaAs:Be;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
3. Dielectric materials in optical waveguide aplications;Interlayer Dielectrics for Semiconductor Technologies;2003
4. Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs;Journal of Applied Physics;1999-01-15
5. Raman probing of thermal damage depth profile in annealed GaAs;Journal of Applied Physics;1998-12-15