Abstract
AbstractAmorphous thin films of GeTe were irradiated with excimer laser pulses and the subsequent crystallization was investigated utilizing simultaneous transient reflectivity and conductivity measurements. Below a threshold fluence of 15 mJ/cm2 pure thermal behaviour was found. Above that value, nucleation and growth are observed during the cooldown process. Above a fluence of 22 mJ/cm2 the films crystallize to a large degree within 200ns. Between 15 and 22 mJ/cm2 crystallite nuclei are formed (“frustrated crystallization”), and application of a subsequent pulse over areas exposed to this fluence regime leads to extremely fast crystallization (50 ns).
Publisher
Springer Science and Business Media LLC
Reference9 articles.
1. Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation
2. 4. Pamler W. and Marinero E. E. J. Appl. Phys. (in press).
3. 2. Huber E. and Marinero E. E. Phys. Rev. B (submitted to).