Author:
Ferreira da Silva A.,Pepe I.,Haratizadeh H.,Holtz P.O.,Persson C.,Ahuja R.,Souza de Almeida J.,de Oliveria A.G.
Abstract
ABSTRACTWe have investigated, theoretically and experimentally, the reduced and optical bandgap shift of Si-doped AlXGa1-XAs alloys as a function of both the Al composition and the Si concentration. The calculations were carried out within a framework of the many particle random phase approximation with the Hubbard local-field correction, considering electron populations in the conduction minima located at the Γ, X and L-points of the Brillouin zone. The experimental data have been obtained by means of photoluminescence spectroscopy. The theoretical predictions are found to be in good agreement with the experimental results.
Publisher
Springer Science and Business Media LLC