Study of GeSn Mid-infrared Photodetectors for High Frequency Applications-Reference-Cited by-同舟云学术

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

Published:2019-11-07 Issue: Volume:6 Page:
ISSN:2296-8016
Container-title:Frontiers in Materials
language:
Short-container-title:Front. Mater.

Author:

Tran Huong,Littlejohns Callum G.,Thomson David J.,Pham Thach,Ghetmiri Amir,Mosleh Aboozar,Margetis Joe,Tolle John,Mashanovich Goran Z.,Du Wei,Li Baohua,Mortazavi Mansour,Yu Shui-Qing

Funder

Air Force Office of Scientific Research

National Aeronautics and Space Administration

Publisher

Frontiers Media SA

Subject

Materials Science (miscellaneous)

Reference35 articles.

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4. Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination;Chang;Appl. Phys. Lett,2016

5. Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique;Dong;Opt. Express,2015

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