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Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

  • Published:2016-03-07 Issue: Volume:3 Page:
  • ISSN:2296-8016
  • Container-title:Frontiers in Materials
  • language:
  • Short-container-title:Front. Mater.

Author:

Lockwood David J.,Wu Xiaohua,Baribeau Jean-Marc,Mala Selina A.,Wang Xiaolu,Tsybeskov Leonid

Funder

National Science Foundation

Hewlett-Packard Development Company

New Jersey Institute of Technology

Publisher

Frontiers Media SA

Subject

Materials Science (miscellaneous)

Reference123 articles.

1. “Chapter 2: band gaps and light emission in Si/SiGe atomic layer structures,”;Abstreiter,1998

2. High performance, waveguide integrated Ge photodetectors;Ahn;Opt. Express,2007

3. Raman spectra of c-Si1− xGex alloys;Alonso;Phys. Rev. B Condens. Matter.,1989

4. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth;Apetz;Appl. Phys. Lett.,1995

5. CMOS-integrated high-speed MSM germanium waveguide photodetector;Assefa;Opt. Express,2010

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