Asymmetric Schottky Barrier-Generated MoS2/WTe2 FET Biosensor Based on a Rectified Signal

Author:

Zhang Xinhao1,Chen Shuo1,Ma Heqi1,Sun Tianyu1,Cui Xiangyong1,Huo Panpan1,Man Baoyuan1,Yang Cheng12

Affiliation:

1. School of Physics and Electronics, Shandong Normal University, Jinan 250014, China

2. Shandong Provincial Engineering and Technical Center of Light Manipulations, Shandong Normal University, Jinan 250014, China

Abstract

Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noise signal, caused by the interference coefficient of external factors, may destroy the quantitative analysis of trace targets in complex biological systems. In this report, a “rectified signal” in the output characteristic curve, instead of the “absolute value signal” in the transfer characteristic curve, is obtained and analyzed to solve these problems. The proposed asymmetric Schottky barrier-generated MoS2/WTe2 FET biosensor achieved a 105 rectified signal, sufficient reliability and stability (maintained for 60 days), ultra-sensitive detection (10 aM) of the Down syndrome-related DYRK1A gene, and excellent specificity in base recognition. This biosensor with a response range of 10 aM–100 pM has significant application potential in the screening and rapid diagnosis of Down syndrome.

Funder

the National Natural Science Foundation of China

the Shandong Provincial Natural Science Foundation

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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