A Review of Nanocrystalline Film Thermoelectrics on Lead Chalcogenide Semiconductors: Progress and Application

Author:

Dashevsky Zinovi1,Mamykin Sergii2ORCID,Dzundza Bohdan3,Auslender Mark4,Shneck Roni Z.1ORCID

Affiliation:

1. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

2. V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine

3. Department of Computer Engineering and Electronics, Vasyl Stefanyk Precarpathian National University, 76018 Ivano-Frankivsk, Ukraine

4. School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

Abstract

Submicron-structured films of thermoelectric materials, exhibiting an improved thermoelectric figure of merit, are reviewed, including methods of fabrication and characterization. The review emphasizes the beneficial role of the grain boundaries in polycrystalline films. The enhanced Seebeck coefficient of lead chalcogenide films is attributed to a potential relief that is built along the grain boundaries. It scatters charge carriers with low energy and does not affect carriers with higher energy. The model that accounts for the thermoelectric properties of the films is described and assessed experimentally. The application of a flexible thermoelectric device (module) based on the nanocrystalline film thermoelectric semiconductors as high sensitivity radiation detectors is suggested.

Publisher

MDPI AG

Subject

Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous),Building and Construction

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