Synthesis of Samarium Nitride Thin Films on Magnesium Oxide (001) Substrates Using Molecular Beam Epitaxy

Author:

Vallejo Kevin D.1ORCID,Cresswell Zachery E.1ORCID,Buturlim Volodymyr2ORCID,Newell Brian S.3ORCID,Gofryk Krzysztof2ORCID,May Brelon J.1ORCID

Affiliation:

1. Condensed Matter and Materials Physics, Idaho National Laboratory, Idaho Falls, ID 83401, USA

2. Center for Quantum Actinide Science and Technology, Idaho National Laboratory, Idaho Falls, ID 83401, USA

3. Materials and Fuels Complex, Idaho National Laboratory, Idaho Falls, ID 83401, USA

Abstract

Rare-earth nitrides are an exciting family of materials with a wide variety of properties desirable for new physics and applications in spintronics and superconducting devices. Among them, samarium nitride is an interesting compound reported to have ferromagnetic behavior coupled with the potential existence of p-wave superconductivity. Synthesis of high-quality thin films is essential in order to manifest these behaviors and understand the impact that vacancies, structural distortions, and doping can have on these properties. In this study, we report the synthesis of samarium nitride monocrystalline thin films on magnesium oxide (001) substrates with a chromium nitride capping layer using molecular beam epitaxy (MBE). We observed a high-quality monocrystalline SmN film with matching orientation to the substrate, then optimized the growth temperature. Despite the initial 2 nm of growth showing formation of a potential samarium oxide layer, the subsequent layers showed high-quality SmN, with semiconducting behavior revealed by an increase in resistivity with decreasing temperature. These promising results highlight the importance of studying diverse heteroepitaxial schemes and open the door for integration of rare-earth nitrides and transition metal nitrides for future spintronic devices.

Funder

INL Laboratory Directed Research and Development Program

NNSA Minority Serving Institution Partnership Program

Publisher

MDPI AG

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