Growth and Characterization of Yb: CALYGLO Crystal for Ultrashort Pulse Laser Applications

Author:

Wang Zebin1,Liu Jian1,Chen Peng2,Liu Peng1,Ma Jie1,Xu Xiaodong1,Wei Yong3,Lebbou Kheirreddine2ORCID,Xu Jun4

Affiliation:

1. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China

2. Institut Lumière Matière, UMR5306 Université Lyon1-CNRS, Université de Lyon, 69622 Lyon, Villeurbanne Cedex, France

3. School of Physics and Electronics Scicence, Hunan Institute of Science and Technology, Yueyang 414006, China

4. School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China

Abstract

Yb:CALYGLO crystals with a dopant concentration of 5 at.% were successfully grown using the Czochralski method. The crystal samples were extensively studied to analyze their structure, room temperature and low temperature spectra, and laser properties. The highest absorption cross-section at 977 nm was calculated to be 1.83 × 10−20 cm2 for σ polarization and 5.32 × 10−20 cm2 for π polarization. Similarly, the emission cross-section was determined to be 1.38 × 10−20 cm2 at 980 nm for σ polarization and 2.28 × 10−20 cm2 at 981 nm for π polarization, with a full width at half maximum (FWHM) of 50.3 nm and 89.5 nm, respectively. The fluorescence lifetime of the 5 at.% Yb:CALYGLO crystal at 2F5/2 was measured to be 1.10 ms. Additionally, gain cross-sections were calculated for different β values. In the continuous laser experiment, the crystal demonstrated a laser output of 20.15 W at 1057 nm, with a slope efficiency of 53.3%. These experimental findings indicate that the lattice of Y3+ in the crystal is partially replaced by Lu3+ and Gd3+, resulting in a broader spectrum. Consequently, this crystal shows promising potential as a gain medium for ultrashort pulse laser crystals.

Funder

National Natural Science Foundation of China

Education Department of Hunan Province

Publisher

MDPI AG

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