Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)-Reference-Cited by-同舟云学术

Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Published:2019-12-04 Issue:12 Volume:9 Page:823
ISSN:2079-6412
Container-title:Coatings
language:en
Short-container-title:Coatings

Author:

Yang Shizheng¹^ORCID,Lv Hongliang¹,Ai Likun²,Tian Fangkun²,Yan Silu¹,Zhang Yuming¹

Affiliation:

1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

2. Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Abstract

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

Funder

National Natural Science Foundation of China

Publisher

MDPI AG

Link

https://www.mdpi.com/2079-6412/9/12/823/pdf

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