First-Principles Study of Electronic Structure and Optical Properties of Ni-Doped Bi4O5Br2

Author:

Sheng Hong1,Zhang Xin2,Xin Shiheng2,Shi Hui2,Liu Gaihui2,Wu Qiao3,Xue Suqin3,Wang Xiaoyang2,Shao Tingting2,Liu Yang2ORCID,Zhang Fuchun2ORCID,Liu Xinghui45ORCID

Affiliation:

1. College of Mathematics & Physics, Weinan Normal University, Weinan 714000, China

2. School of Physics and Electronic Information, Yan’an University, Yan’an 716000, China

3. Network Information Center, Yan’an University, Yan’an 716000, China

4. Science and Technology on Aerospace Chemical Power Laboratory, Xiangyang 441003, China

5. Hubei Institute of Aerospace Chemotechnology, Xiangyang 441003, China

Abstract

In this study, we comprehensively explored the electronic structure and optical properties of Ni-doped Bi4O5Br2 through first-principles computational calculations. By calculating its electronic structure and band characteristics, we investigated the impact of Ni doping on the photocatalytic performance of Bi4O5Br2. The computational results indicated that Ni doping significantly altered the band structure of Bi4O5Br2, leading to a reduction in the band gap width. The band gap for undoped Bi4O5Br2 was 2.151 eV, whereas the Ni-doped system exhibited a smaller band gap, directly indicating its enhanced visible light absorption capacity and facilitating the effective separation of photo-generated electron–hole pairs. Through analysis of 2D charge density maps, we observed changes in chemical bonding induced by Ni doping. The shortening of Ni-O bonds suggested increased bond strength, consistent with the observed reduction in cell volume. These findings provide a theoretical foundation for understanding the mechanisms behind the enhanced photocatalytic hydrogen production performance in Ni-doped Bi4O5Br2, offering valuable insights for the design and optimization of highly efficient photocatalytic materials.

Funder

National Natural Science Foundation of China

2023 Innovation and Entrepreneurship for Undergraduates

Publisher

MDPI AG

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