A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation-Reference-Cited by-同舟云学术

A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation

Published:2023-07-05 Issue:13 Volume:13 Page:7892
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Park Youngtae¹,Park Hyunbum²^ORCID

Affiliation:

1. IOG Semiconductor, Inc., KETI #413, 111, Ballyong-ro, Deokjin-gu, Jeonju 54853, Republic of Korea

2. Department of Mechanical Engineering, Kunsan National University, 558 Daehak-ro, Miryong-dong, Gunsan 54150, Republic of Korea

Abstract

In this work, a study on large-diameter GaAs ingot growth is presented. Optimized temperature control technology is developed. Horizontal and vertical temperature application technologies with optimum conditions are investigated. The design result is verified through thermal analysis. In addition, polishing process technology for large-diameter GaAs substrates is developed. Simulation data were used to carry out experiments to determine the optimum temperature conditions. As a result of the defect analysis, the final manufacturing result is found to have excellent thickness variations. This presents the validity of the manufacturing process developed in this work.

Funder

Korea Institute for Advancement of Technology

Korea Basic Science Institute

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

https://www.mdpi.com/2076-3417/13/13/7892/pdf

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