Development and Evaluation of Ferrite Core Inductively Coupled Plasma Radio Frequency Ion Source for High-Current Ion Implanters in Semiconductor Applications

Author:

Hwang Jong-Jin1ORCID,Sim Hyo-Jun1,Moon Seung-Jae1ORCID

Affiliation:

1. Department of Mechanical Convergence Engineering, Hanyang University, Seoul 04763, Republic of Korea

Abstract

This study presents the development of a ferrite core inductively coupled plasma (ICP) radio frequency (RF) ion source designed to improve the lifetime of ion sources in commercial ion implanters. Unlike existing DC methods, this novel approach aims to enhance the performance and lifetime of the ion source. We constructed a high-vacuum evaluation chamber to thoroughly examine RF ion source characteristics using a Langmuir probe. Comparative experiments assessed the extraction current of two upgraded ferrite core RF ion sources in a commercial ion implanter setting. Additionally, we tested the plasma lifetime of the ICP source and took temperature measurements of various components to verify the operational stability and efficiency of the innovative design. This study confirmed that the ICP RF ion source operated effectively under a high vacuum of 10−5 torr and in a high-voltage environment of 30 kV. We observed that the extraction current increased linearly with RF power. We also confirmed that BF3 gas, which presents challenging conditions, was stably ionized in the ICP RF ion sources.

Funder

Korea Institute for Advancement of Technology

Publisher

MDPI AG

Reference34 articles.

1. Olson, J.C., Maciejowski, P.E., Shengwu, C., and Klos, L. (2002, January 22–27). Varian Semiconductor Indirectly Heated Cathode Sources. Proceedings of the 14th International Conference on Ion Implantation Technology, Taos, NM, USA.

2. Tanaka, K., Umisedo, S., Miyabayashi, K., Fujita, H., Kinoyama, T., Hamamoto, N., Yamashita, T., and Tanjyo, M. (2006). Nissin Ion Equipment Indirectly Heated Cathode Ion. AIP Conference Proceedings, Proceedings of the ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology—IIT 2006, Marseille, France, 11–16 June 2006, American Institute of Physics.

3. The Multiply Charged Ion Source with Indirectly Heated Cathode;Makov;IEEE Trans. Nucl. Sci.,1976

4. Horsky, T.N., Chen, J., Reynolds, W.E., and Jones, M.A. (1998, January 22–26). Current Status of the Extended Life Source: Lifetime and Performance Improvements. Proceedings of the 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), Kyoto, Japan.

5. Rathmeli, R.D., Hsieh, T.J., and Trueira, F.R. (2000, January 17–22). Modifications to Improve Lifetime of the ELS Ion Source. Proceedings of the 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology—2000 (Cat. No.00EX432), Alpbach, Austria.

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