Affiliation:
1. Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, 15784 Athens, Greece
2. Department of Electrical and Computer Engineering, University of Thessaly, 38333 Volos, Greece
3. Department of Materials, Imperial College London, London SW7 2BP, UK
Abstract
Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example Ni, Ns, NiNi, NiNs, NsNs); nitrogen–self-interstitial and nitrogen-vacancy-related complexes (for example NsV, (NiNi)Sii, (NsNs)V); nitrogen–oxygen defects (for example NO, NO2, N2O, N2O2); more extended clusters such as VmN2On (m, n = 1, 2); and nitrogen–carbon defects (for example CiN and CiNO). Both experimental and theoretical investigations are considered as they provide complementary information.
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