The Influence of Environmental Temperature on the Passive Oxidation Process in the C/SiC Composite

Author:

Zhu Qingyong1,Jie Haixin1,Lu Shun1ORCID,Li Zhihui2

Affiliation:

1. School of Aeronautics and Astronautics, Sun Yat-sen University, Shenzhen 518107, China

2. National Laboratory of Computational Fluid Dynamics, Beijing 100191, China

Abstract

The C/SiC composite plays a crucial role in providing thermal protection for hypersonic vehicles. The SiO2 oxide layer formed via passive oxidation during ablation constitutes a typical porous medium with self-similarity. Given its significant impact on the thermal protection of the material, accurately predicting the variation in the SiO2 oxide layer thickness is of paramount importance. The growth of the oxide layer impedes the diffusion of oxygen within the material. This study considered microstructural parameters of the oxide layer based on high-temperature gas oxidation tests of the C/SiC composite. Fractal theory was utilized to construct a fractal diffusion-reaction kinetics model describing oxygen diffusion within the oxide layer and the evolution of the oxide layer under varying environmental conditions. The finding demonstrated that the existence of the oxide layer significantly influences the passive oxidation of the composite. This study underscored the significance of predicting the impact of environmental parameters on passive oxidation in the practical application of the C/SiC composite and the study result offers a valuable reference for evaluating the thermal resistance of the C/SiC composite.

Funder

National Natural Science Foundation of China

Guangdong Provincial Key-Area R&D Program

Publisher

MDPI AG

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