Affiliation:
1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract
A 1083 nm laser, corresponding to a characteristic spectral line of 3He 23S1-23P, is the core light source for spin-exchange optical pumping-free technology, and thus has important developmental significance. In this paper, precise wavelength 1083.34 nm semiconductor lasers with 285 mW output power, −144.73 dBc/Hz RIN noise and 30.9952 kHz linewidth have been successfully achieved via reasonable chips design, high-quality epitaxial growth process and ultra-low reflectivity coating fabrication. All the results show the highest output power and ultra-narrow linewidth of the single-frequency 1083 nm DFB semiconductor laser achieved in this paper, which can fully satisfy the requirement of quantum magnetometers.
Funder
National Key Research and Development Program of China
Subject
Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics