Precision Grinding Technology of Silicon Carbide (SiC) Ceramics by Longitudinal Torsional Ultrasonic Vibrations

Abstract

Silicon carbide (SiC) ceramic material has become the most promising third-generation semiconductor material for its excellent mechanical properties at room temperature and high temperature. However, SiC ceramic machining has serious tool wear, low machining efficiency, poor machining quality and other disadvantages due to its high hardness and high wear resistance, which limits the promotion and application of such materials. In this paper, comparison experiments of longitudinal torsional ultrasonic vibration grinding (LTUVG) and common grinding (CG) of SiC ceramics were conducted, and the longitudinal torsional ultrasonic vibration grinding SiC ceramics cutting force model was developed. In addition, the effects of ultrasonic machining parameters on cutting forces, machining quality and subsurface cracking were investigated, and the main factors and optimal parameters affecting the cutting force improvement rate were obtained by orthogonal tests. The results showed that the maximum improvement of cutting force, surface roughness and subsurface crack fracture depth by longitudinal torsional ultrasonic vibrations were 82.59%, 22.78% and 30.75%, respectively. A longitudinal torsional ultrasonic vibrations cutting force prediction model containing the parameters of tool, material properties and ultrasound was established by the removal characteristics of SiC ceramic material, ultrasonic grinding principle and brittle fracture theory. And the predicted results were in good agreement with the experimental results, and the maximum error was less than 15%. The optimum process parameters for cutting force reduction were a spindle speed of 22,000 rpm, a feed rate of 600 mm/min and a depth of cut of 0.011 mm.