Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics
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Published:2024-01-22
Issue:1
Volume:15
Page:164
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Lee Subin1ORCID, Kim Yeong Jae2, Yoo Hocheon1ORCID
Affiliation:
1. Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea 2. Korea Institute of Ceramic Engineering and Technology, Ceramic Total Solution Center, Icheon 17303, Republic of Korea
Abstract
With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric fields within the device. This configuration enables the potential formation of both p- and n-channels by injecting holes and electrons owing to the presence of the two gate electrodes. Applying voltage to the split-gate allows for the control of the Fermi level and, consequently, the barrier height in the device. This facilitates band bending in unipolar transistors and allows ambipolar transistors to operate as if unipolar. Moreover, the split-gate serves as a revolutionary tool to modulate the contact resistance by controlling the barrier height. This approach enables the precise control of the device by biasing the partial electric field without limitations on materials, making it adaptable for various applications, as reported in various types of research. However, the gap length between gates can affect the injection of the electric field for the precise control of carriers. Hence, the design of the gap length is a critical element for the split-gate structure. The primary investigation in this review is the introduction of split-gate technology applied in various applications by using diverse materials, the methods for forming the split-gate in each device, and the operational mechanisms under applied voltage conditions.
Funder
National Research Foundation of Korea Ministry of Trade, Industry and Energy Gachon University Research Fund of 2023
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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