Study on the Interface Microstructure of TaC/GCr15 Steel Surface Reinforced Layer Formed by In-Situ Reaction

Author:

Li Jilin12ORCID,Li Ruixue3,Xu Yunhua1,Liu Zhuolin4,Chen Le24,Zhu Yao2

Affiliation:

1. School of Material Science and Engineering, Xi’an University of Technology, Xi’an 710048, China

2. Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510650, China

3. School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China

4. School of Materials Science and Engineering, Central South University, Changsha 410083, China

Abstract

In this study, a micro–nano TaC ceramic steel matrix reinforced layer was prepared by an in situ reaction between a pure tantalum plate and GCr15 steel. The microstructure and phase structure of the in situ reaction reinforced layer of the sample at 1100 °C and reaction time 1 h were characterized with FIB micro-section, TEM transmission, SAED diffraction pattern, SEM and EBSD. The phase composition, phase distribution, grain size, grain orientation and grain boundary deflection, phase structure and lattice constant of the sample were characterized in detail. The results show that the phase composition of the Ta sample is Ta, TaC, Ta2C and α-Fe. TaC is formed after Ta and carbon atoms meet, and the orientation changes in the X and Z directions. The grain size of TaC is widely in the range of 0~0.4 μm, and the angular deflection of TaC grain is not obvious. The high-resolution transmission structure, diffraction pattern and interplanar spacing of the phase were characterized, and the crystal planes of different crystal belt axes were determined. The study provides technical and theoretical support for further research on the preparation technology and microstructure of the TaC ceramic steel matrix reinforcement layer.

Funder

National Natural Science Foundation of China

New R&D institutions for the East, West And North of Guangdong Province of China

Publisher

MDPI AG

Subject

General Materials Science

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