Theoretical Modeling and Analysis of the Contribution of the Near-Field Absorption to the Dipole Radiation Power in Top-Emitting Organic Light-Emitting Diodes

Abstract

We theoretically model the near-field (NF) absorption for a multilayer micro-cavity (MMC) structure and investigate the contribution of the NF absorption to the dipole radiation power in top-emitting organic light-emitting diodes (OLEDs). The NF absorption occurs due to the interaction between an evanescent wave with a large in-plane wave vector and a planar metal layer in the vicinity of the dipole radiation. The analytical expressions of the NF absorption in the MMC structure are derived from the plane wave expansions of the electric field amplitude, which includes the two-beam and multi-beam interference terms. The transverse magnetic polarization light emitted by both horizontally and vertically oriented dipole emitters is considered in the NF absorption while the contribution of the transverse electric polarization light is neglected. Based on the total spectral power density calculated in a top-emitting OLED, the respective spectral response functions of surface plasmon (SP) modes and NF absorption are compared, where the summation of the Lorentzian line shape functions is used to represent spectral responses of SP modes. At large values of in-plane wave vectors, the spectral response caused by the NF absorption becomes significant and approaches the total spectral power density. In addition, the relative optical powers from various dipole dissipation mechanisms are calculated with respect to the dipole emitter position in the emission layer (EML), which shows the optical power coupled to the NF absorption is predominant over other mechanisms when the distance between the dipole emitter and the EML/Ag interface is less than 10 nm in the top-emitting OLED.