Systematical Study of the Basic Properties of Surface Acoustic Wave Devices Based on ZnO and GaN Multilayers

Abstract

Recently, surface acoustic wave (SAW) devices based on layered structures are a popular area of research. Multilayered structures, including ZnO and GaN, have shown great performance and can be applied in diverse fields. Meanwhile, thin films, such as AlGaN and n-ZnO, can be added to these structures to form a 2-D electron gas (2DEG) which makes the devices tunable. This work systematically studies the basic properties of SAW devices based on ZnO and GaN multilayers via COMSOL Multiphysics. The sorts of structures with different crystal orientations are simulated, and various acoustic modes are considered. Results show that a range of phase velocity from about 2700 m/s to 6500 m/s can be achieved, and devices based on ZnO and GaN multilayers can meet the requirements of the electromechanical coupling coefficient from about 0 to 7%. Every structure’s unique properties are valuable for diverse applications. For example, c-ZnO/c-GaN/c-sapphire structure can be used for high-frequency and large-bandwidth SAW devices, while SAW devices based on a-ZnO/a-GaN/r-sapphire and 2DEG are suitable for programmable SAW sensors. This work has great reference value for future research into SAW devices.