2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems

Abstract

Resistive switching (RS) memory devices are gaining recognition as data storage devices due to the significant interest in their switching material, Halide perovskite (HP). The electrical characteristics include hysteresis in its current–voltage (I–V) relationship. It can be attributed to the production and migration of defects. This property allows HPs to be used as RS materials in memory devices. However, 3D HPs are vulnerable to moisture and the surrounding environment, making their devices more susceptible to deterioration. The potential of two-dimensional (2D)/quasi-2D HPs for optoelectronic applications has been recognized, making them a viable alternative to address current restrictions. Two-dimensional/quasi-2D HPs are created by including extended organic cations into the ABX3 frameworks. By adjusting the number of HP layers, it is possible to control the optoelectronic properties to achieve specific features for certain applications. This article presents an overview of 2D/quasi-2D HPs, including their structures, binding energies, and charge transport, compared to 3D HPs. Next, we discuss the operational principles, RS modes (bipolar and unipolar switching), in RS memory devices. Finally, there have been notable and recent breakthroughs in developing RS memory systems using 2D/quasi-2D HPs.